Type Designator: IRFB4110
Marking Code: IRF4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 370 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 180 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 150 nC
trⓘ – Rise Time: 67 nS
Cossⓘ – Output Capacitance: 670 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220AB
IRFB4110 Transistor
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IRF3808 used
₨ 120 Original price was: ₨ 120.₨ 90Current price is: ₨ 90.

IRFB4115 MOSFET NEW
₨ 250 Original price was: ₨ 250.₨ 225Current price is: ₨ 225.
IRFB4110 MOSFET Used
₨ 180 Original price was: ₨ 180.₨ 150Current price is: ₨ 150.
Category: FET/IGBT/Transistor/DIODE
Description
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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