IRF9540 MOSFET New

Type Designator: IRF9540
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 150 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 19 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 61(max) nC
trⓘ – Rise Time: 73 nS
Cossⓘ – Output Capacitance: 590 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220AB