ype Designator: IXTH75N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ – Maximum Power Dissipation: 330 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ – Maximum Drain Current: 75 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Qg ⓘ – Total Gate Charge: 210 nC
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C

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