ype Designator: IXTH75N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ – Maximum Power Dissipation: 330 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ – Maximum Drain Current: 75 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Qg ⓘ – Total Gate Charge: 210 nC
-25%
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