35N60C3 IXDH35N60 PRICE IN PAKISTAN

Type Designator: SPW35N60C3
Marking Code: 35N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ – Maximum Power Dissipation: 313 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3.9 V
|Id| ⓘ – Maximum Drain Current: 34.6 A
Tj ⓘ – Maximum Junction Temperature: 150 °C
Qg ⓘ – Total Gate Charge: 150 nC
tr ⓘ – Rise Time: 5 nS
Cossⓘ – Output Capacitance: 1500 pF
Rds ⓘ – Maximum Drain-Source On-State Resistance: 0.1 Ohm