The RHRG75120 is a Hyperfast Diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
High reliability
Avalanche energy rated
1200VDC Blocking voltage
190W Maximum power dissipation
0.8°C/W Junction to case thermal resistance
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Rhrg75120
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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