Type Designator: 12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 225 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 42 nC
trⓘ – Rise Time: 115 nS
Cossⓘ – Output Capacitance: 200 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.6 Ohm
-17%
10N60 N-Channel Mosfet Transistor
Original price was: ₨ 150.₨ 125Current price is: ₨ 125.
20N60 MOSFET – 650V 20.7A N-Channel Power MOSFET Package-TO-220
Original price was: ₨ 200.₨ 150Current price is: ₨ 150.
Mosfet 12n60 600v 12a Mosfet N-channel Transistor New Original
Original price was: ₨ 120.₨ 100Current price is: ₨ 100.
Type: N-Channel
Package: TO-220
VDSS= 600V
ID= 12A
Fast Switching
Low ON Resistance(Rdson≤0.75Ω)
Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency, Power Switch Circuit of Adaptor and Charge.
Description
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Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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