IGBT driver, DIP, International Rectifier, IR2102, -0.3 to 625V, 0.625W

Product Summary
The IR2102 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel of the IR2102 can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parametrics
IR2102 absolute maximum ratings: (1)VB High side floating supply voltage: -0.3 to 625V; (2)VS High side floating supply offset voltage: VB-25 to VB+0.3V; (3)VHO High side floating output voltage VS: – 0.3 to VB+0.3V; (4)VCC Low side and logic fixed supply voltage: -0.3 to 25V; (5)VLO Low side output voltage: -0.3 to VCC + 0.3V; (6)VIN Logic input voltage (HIN & LIN): -0.3 to VCC + 0.3V; (7)dVS/dt Allowable offset supply voltage transient: 50V/ns; (8)PD Package power dissipation @ TA≤ +25℃: 0.625W; (9)RthJA Thermal resistance, junction to ambient: 200℃/W; (10)TJ Junction temperature: 150℃; (11)TS Storage temperature: -55 to 150℃; (12)TL Lead temperature (soldering, 10 seconds): 300℃.

Features
IR2102 features: (1)Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune; (2)Gate drive supply range from 10 to 20V; (3)Undervoltage lockout; (4)5V Schmitt-triggered input logic; (5)Matched propagation delay for both channels; (6)Outputs in phase with inputs (IR2101/IR21014) or out of phase with inputs (IR2102/IR21024).