The CD4015B consists of two identical, independent, 4-stage serial-input/parallel-output registers
Medium speed operation…12 MHz (typ.) clock rate at VDD – VSS = 10 V, Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C
Fully static operation, 5-V, 10-V, and 15-V parametric ratings, Noise margin (full package-temperature range) = 1 V at VDD = 5 V 2 V at VDD = 10 V 2.5 V at VDD = 15 V
8 master-slave flip-flops plus input and output buffering, Meets all requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ’B’ Series CMOS Devices”
100{7e82c6d62784066d1b113f595afb6e15f0ca3fec289cddd29e600df910d44428} tested for quiescent current at 20 V, Standardized, symmetrical output characteristics, Example Applications: Serial-input/parallel-output data queueing, Serial to parallel data conversion, General-purpose register
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Soldering Iron Goot 20W for PCB Nichrome Heater KS-20R Made in Japan PRICE IN PAKISTAN
₨ 3000 Original price was: ₨ 3000.₨ 2750Current price is: ₨ 2750.
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CD4015 CMOS Dual 4-Stage Static Shift Register Price in Pakistan
₨ 90 Original price was: ₨ 90.₨ 85Current price is: ₨ 85.
Category: IC,S DIP/SMD
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Maximum supply voltage: 7V
Maximum current allowed to draw through each gate output: 8mA
TTL outputs
Low power consumption
Maximum ESD: 3.5KV
Typical Rise Time: 15ns
Typical Fall Time: 15ns
Operating temperature :0°C to 70°C
Storage Temperature: -65°C to 150°C
Operating temperature: 0°C to 75°C
Pin Number Description
NORGATE 1
2 1A-INPUT1 of GATE 1
3 1B-INPUT2 of GATE 1
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5 2A-INPUT1 of GATE 2
6 2B-INPUT2 of GATE 2
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NORGATE 3
8 3A-INPUT1 of GATE 3
9 3B-INPUT2 of GATE 3
10 3Y-OUTPUT of GATE3
NORGATE 4
11 4A-INPUT1 of GATE 4
12 4B-INPUT2 of GATE 4
13 4Y-OUTPUT of GATE4
SHARED TERMINALS
7 GND- Connected to ground
14 VCC-Connected to positive voltage to provide power to all four gates
SKU: 0401 Categories: Discrete Electronic Components, ICs, Logic Gates Tags: 2input, 74LS02, Gate, IC, NOR, quad
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Advanced RISC Architecture.
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On-chip 2-cycle Multiplier.
High Endurance Non-volatile Memory segments.
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