BC640 PNP medium power transistors PNP

PNP medium power transistorsPNP

Transistor Type:PNP
Brand:NXP Semiconductors
DateCode:09+
Package / Case:TO92
Collector-Emitter Voltage (Vce):-80 V
Collector-Base Voltage (Vcb):-80 V
Emitter-Base Voltage (Veb):-5 V
Collector Current (Ic):-1 A
Power Dissipation (Ptot):625 mW (at T amb. ≤ 25°C)
DC Current Gain (hFE):40 to 250 (depending on current)
Transition Frequency (ft):100 MHz
Thermal Resistance Junction to Ambient (RθJA):200 K/W
Max Storage Temperature (Tstg):-55 to +150 °C
Max Operating Junction Temperature (Tj):+150 °C
All product names, trademarks, brands and logos used on this site are the property of their respective owners. The depiction, description or sale of products featuring these names, trademarks, brands and logos is for identification purposes only and is not intended to indicate any affiliation with or authorization by any rights holder.

Product Attributes
Description: PNP Bipolar Transistor Features: Low current (max. 100 mA) Low voltage (max. 45 V). High current gain Low noise Low collector-emitter saturation voltage High switching speed Applications: General purpose switching and amplification Audio amplifiers High speed switching Motor control Interface circuits Low noise amplifiers Voltage regulators (For reference only)