75N75 TO220 USED

Type Designator: 75N75
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 300 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 80 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 430 nC
trⓘ – Rise Time: 208 nS
Cossⓘ – Output Capacitance: 773 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0095 Ohm