Type Designator: IPW60R099CPA
Marking Code: 6R099A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 255 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ – Maximum Drain Current: 31 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 60 nC
trⓘ – Rise Time: 5 nS
Cossⓘ – Output Capacitance: 130 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
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-11%

GP4068 Used Price in Pakisatn
₨ 400 Original price was: ₨ 400.₨ 375Current price is: ₨ 375.

60R075CP 6R075P Transistor N-MOSFET 600V 39A 313W TO-247 NEW
₨ 450 Original price was: ₨ 450.₨ 400Current price is: ₨ 400.
6R099 MOSFET Price in Pakisan
₨ 450 Original price was: ₨ 450.₨ 400Current price is: ₨ 400.
Category: FET/IGBT/Transistor/DIODE
Tag: INFINEON 6R099 MOSFET
Description
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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