2SK2611 MOSFET N-CH 9A 900V TO-247 (used)

Type Designator: 2SK2611
Marking Code: K2611
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 150 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 9 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 58 nC
trⓘ – Rise Time: 25 nS
Cossⓘ – Output Capacitance: 190 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 1.4 Ohm