Type – NPN
Collector-Emitter Voltage: 400 V
Collector-Base Voltage: 450 V
Emitter-Base Voltage: 7 V
Collector Current: 10 A
Collector Dissipation – 80 W
DC Current Gain (hfe) – 10
Operating and Storage Junction Temperature Range -55 to +150 °C
Package – TO-3P
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Category: FET/IGBT/Transistor/DIODE
Tag: 2sc2625 Transistor used
Description
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C

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