Type Designator: TK100E10N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 255 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Id|ⓘ – Maximum Drain Current: 100 A
Tjⓘ – Maximum Junction Temperature: 150 °C
trⓘ – Rise Time: 32 nS
Cossⓘ – Output Capacitance: 1500 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO-220
-25%
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Specifications
Some Ratings and characteristics(@TC= 25°C):
Type: N-Channel
Package: TO-220
VDSS= 55V
ID= 49A
RDS(on)(Typ.)= 17.5mΩ
VGSS= ±20V
Ptot= 94W
Trr(Typ.)= 63ns
Tj= -55 to 175°C
Tstg= -55 to 175°C°C
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