Features
Fully isolated Dual In-Line molded module
●TrenchStop IGBTs
●Rugged SOI gate driver technology with stability
against transient and negative voltage
●Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
●Integrated bootstrap functionality
●Over current shutdown
●Temperature monitor
●Under-voltage lockout at all channels
●Low side emitter pins accessible for all phase
current monitoring (open emitter)
●Cross-conduction prevention
●All of 6 switches turn off during protection
●Lead-free terminal plating; RoHS compliant
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