IHW40T60 USED

Type Designator: IHW40T60
Type: IGBT + Anti-Parallel Diode
Marking Code: H40T60B
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 303 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
Coesⓘ – Output Capacitance, typ: 113 pF
Qgⓘ – Total Gate Charge, typ: 215 nC
Package: TO247