FGA25N120ANTD USED

Type Designator: FGA25N120ANTD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 312 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 60 nS
Coesⓘ – Output Capacitance, typ: 130 pF
Qgⓘ – Total Gate Charge, typ: 200 nC
Package: TO3P