Type Designator: IKW75N65T
Type: IGBT + Anti-Parallel Diode
Marking Code: K75T60
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 428 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 36 nS
Coesⓘ – Output Capacitance, typ: 288 pF
Qgⓘ – Total Gate Charge, typ: 470 nC
Package: TO247
IKW75N60T Transistor Equivalent Substitute
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