Type Designator: 2N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 54 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 2 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 40 nC
trⓘ – Rise Time: 35 nS
Cossⓘ – Output Capacitance: 45 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 3.6 Ohm
-20%
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