20N60 MOSFET – 650V 20.7A N-Channel Power MOSFET Package-TO-220

Type Designator: 20N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 416 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 20 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 170 nC
trⓘ – Rise Time: 130 nS
Cossⓘ – Output Capacitance: 330 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.32 Ohm