IRFB4115 MOSFET NEW

Type Designator: IRFB4115
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 380 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 104 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 77 nC
trⓘ – Rise Time: 73 nS
Cossⓘ – Output Capacitance: 490 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220AB